silicon npn transistor epitaxial typeD5023 [ applications ] general purpose[ feature ] low collector saturation voltage vce(sat)= 0.8v(max.) at ic= 2a, ib= 0.2a [ absolute maximum ratings (ta=25c) ] symbol unit collector-base voltage vcbo 40 v collector-emitter voltage vceo 32 v emitter-base voltage vebo 5 v collector current ic 2 a junction temperature tj 150 c storage temperature tstg -55 to 150 c [ electrical characteristics (ta=25c) ] symbol min. typ. max. unit collector-base breakdown voltage bvcbo 40 - - v ic= 50ua, ie= 0a collector-emitter breakdown voltage bvceo 32 - - v ic= 1ma, ib= 0a emitter-base breakdown voltage bvebo 5 - - v ie= 50ua, ic= 0a collector cut-off current icbo - - 1 ua vcb= 20v emitter cut-off current iebo - - 1 ua veb= 4v dc current gain hfe 82 - 360 - vce= 3v, ic= 0.5a collector-emitter saturation voltage vce(sat) - - 0.8 v ic= 2a, ib= 0.2a transition frequency f t - 100 - mhz vce= 5v, ie= -0.5a collector output capacitance cob - 30 - pf vcb= 10v, f = 1mhz, ie= 0a notice 1) these are measured data of transistors assembled by phenitec semiconductor corp. and are for reference only.notice 2) the contents described herein are subject to change without notice. no. D5023-20080917 - 1/2 - characteristic conditions phenitec semiconductor corp. D5023 characteristic maximum ratings free datasheet http://www.datasheetlist.com/
no. D5023-20080917 - 2/2 - phenitec semiconductor corp. D5023 fig.6 ft - ie at vce= 5v, ta= 25c 10 100 1000 0.001 0.01 0.1 1 emitter current : -ie (a) transition frequency : ft (mhz) fig.7 cob - vcb at f= 1mhz, ta= 25c 10 100 0.1 1 10 100 collector-base voltage : vcb (v) collector output capacitance : cob (pf) fig.2 hfe - ic at vce= 3v, ta= 25c 10 100 1000 0.001 0.01 0.1 1 10 collector current : ic (a) dc current gain : hfe fig.1 ic - vbe(on) at vce= 3v, ta= 25c 0.001 0.01 0.1 1 10 0.5 0.7 0.9 1.1 base-emitter on voltage : vbe(on) (v) collector current : ic (a) fig.3 vce(sat) - ic at ic/ib= 10, ta= 25c 0.01 0.1 1 0.001 0.01 0.1 1 10 collector current : ic (a) collector-emitter saturation voltage : vce(sat) (v) fig.5 vbe(sat) - ic at ic/ib= 10, ta= 25c 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) base-emitter saturation voltage : vbe(sat) (v) fig.8 cib - veb at f= 1mhz, ta= 25c 100 1000 0.1 1 10 emitter-base voltage : veb (v) collector input capacitance : cib (pf) fig.4 vce(sat) - ic at ic/ib= 17.8, ta= 25c 0.01 0.1 1 0.001 0.01 0.1 1 10 collector current : ic (a) collector-emitter saturation voltage : vce(sat) (v) free datasheet http://www.datasheetlist.com/
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